Method of forming a conductive barrier layer within critical...

Details Method of forming a conductive barrier layer within critical... Method of forming a conductive barrier layer within critical...

2006-07-04

2006-07-04

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S648000, C438S653000, C438S683000, C257SE21169

Reexamination Certificate

active

07071096

ABSTRACT:
In forming a thin conductive layer in an interconnect structure by sputter deposition including a re-sputtering step, a flash deposition step is performed after the re-sputtering step to provide a sufficient layer thickness at critical locations, such as at positions of structure irregularities. The flash deposition step may be performed for a fixed process time so that less effort in process control is required while, at the same time, an increased reliability may be obtained compared to conventional approaches without a flash deposition.

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patent: WO 02/091461 (2002-11-01), None

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