Method of forming a conductive barrier layer having improve...

Details Method of forming a conductive barrier layer having improve... Method of forming a conductive barrier layer having improve...

2005-01-11

2005-01-11

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S628000, C438S648000, C438S653000, C438S654000, C438S656000, C438S658000, C438S676000, C438S685000

Reexamination Certificate

active

06841468

ABSTRACT:
The adhesion properties of a metal interconnect structure are enhanced by selectively depositing a barrier layer component having good adhesion to an underlying metal on the bottom surface of a via. Then, a further barrier layer having superior adhesion characteristics for the dielectric is formed on the dielectric sidewalls of the via, so that excellent adhesion to the dielectric and the underlying metal is achieved. The selectivity of the deposition may be accomplished by exploiting the capabilities of modem IPVD tools.

REFERENCES:
patent: 5654233 (1997-08-01), Yu
patent: 5933753 (1999-08-01), Simon et al.
patent: 5985759 (1999-11-01), Kim et al.
patent: 6080285 (2000-06-01), Liu et al.
patent: 6176983 (2001-01-01), Bothra et al.
patent: 6217721 (2001-04-01), Xu et al.
patent: 6303490 (2001-10-01), Jeng
patent: 6316360 (2001-11-01), Burton et al.
patent: 6342448 (2002-01-01), Lin et al.
patent: 6387800 (2002-05-01), Liu et al.
patent: 6440831 (2002-08-01), Klatt et al.
patent: 6495921 (2002-12-01), Burton et al.
patent: 6508919 (2003-01-01), Licata et al.
patent: 6624062 (2003-09-01), Miyamoto
patent: 6673716 (2004-01-01), D'Couto et al.
patent: 6720253 (2004-04-01), Wada et al.
patent: 20020041028 (2002-04-01), Choi et al.
patent: 20020060363 (2002-05-01), Xi et al.
patent: 20020084181 (2002-07-01), Gopalraja et al.
patent: 20030162391 (2003-08-01), Donohue et al.

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