Method of forming a CMOS transistor

Details Method of forming a CMOS transistor Method of forming a CMOS transistor

2006-06-20

2006-06-20

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S153000, C438S185000, 63

Reexamination Certificate

active

07064017

ABSTRACT:
A method of forming a CMOS transistor on a substrate is provided, wherein the method requires only two implanting procedures to form all source/drain and light doped region. First, the source/drain of an NMOS transistor is formed by using a photoresist layer which covers up the source/drain of a PMOS transistor as a mask with a phosphorus dopant being implanted into. Next, the lightly doped region of an NMOS transistor and the source/drain of a PMOS transistor are formed by using a photoresist layer which covers up the source/drain of an NMOS transistor as well as the gate as masks with a boron dopant being implanted into. Of which, the dosage of the boron dopant is smaller than that of the phosphorus dopant.

REFERENCES:
patent: 6156598 (2000-12-01), Zhou et al.
patent: 6699738 (2004-03-01), Hwang et al.
patent: 2002/0028543 (2002-03-01), Yamazaki et al.

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