Method of forming a CMOS thin film transistor device

Details Method of forming a CMOS thin film transistor device Method of forming a CMOS thin film transistor device

2005-06-07

2005-06-07

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S154000, C438S163000, C438S164000

Reexamination Certificate

active

06902961

ABSTRACT:
A method of forming a CMOS thin film transistor device. A dry etching procedure is performed to remove part of a photoresist layer and part of a metal layer and thus forms a gate with a symmetrical cone shape and a remaining photoresist layer. The dielectric layer is thus exposed in the lightly doped area. Specially, the bottom width of the first gate is narrower than that of the first metal layer and the symmetrical cone shape is gradually thinner from bottom to top. Using the gate as a mask, an n−-ion implantation is performed to form a self-aligned and symmetrical LDD region in a semiconductor layer without additional photolithography steps.

REFERENCES:
patent: 2003/0203545 (2003-10-01), Hamada et al.

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