Method of forming a chalcogenide memory cell having a...

Details Method of forming a chalcogenide memory cell having a... Method of forming a chalcogenide memory cell having a...

2006-09-26

2006-09-26

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S019000, C257S063000, C257S310000, C257SE31027, C257SE31029

Reexamination Certificate

active

07112836

ABSTRACT:
A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch semiconductor processing steps. The resulting memory element can be driven by a CMOS steering element.

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