Method of forming a chalcogenide compound target

Details Method of forming a chalcogenide compound target Method of forming a chalcogenide compound target

2007-09-25

2010-06-01

Griffin, Steven P (Department: 1791)

Plastic and nonmetallic article shaping or treating: processes

Outside of mold sintering or vitrifying of shaped inorganic...

C501S087000, C501S093000, C252S516000

Reexamination Certificate

active

07727458

ABSTRACT:
In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.

REFERENCES:
patent: 6987467 (2006-01-01), Romeo et al.
patent: 2002/0172139 (2002-11-01), Kondo et al.
patent: 2007/0099332 (2007-05-01), Kardokus et al.
patent: 10-2004-0004137 (2004-01-01), None
patent: 10-2004-0076225 (2004-08-01), None
patent: 10-2006-0001105 (2006-01-01), None
patent: 546406 (2006-01-01), None
patent: 1401918 (1994-02-01), None

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