Method of forming a ceramic diffusion barrier layer

Details Method of forming a ceramic diffusion barrier layer Method of forming a ceramic diffusion barrier layer

2007-08-14

2007-08-14

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S782000, C438S789000, C438S781000, C438S786000, C257SE23167, C257SE21262, C257SE21263, C257SE21273, C257SE21277

Reexamination Certificate

active

11128493

ABSTRACT:
The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz, where 0.1≦v≦0.9, 0≦w≦0.5, 0.01≦x≦0.9, 0≦y≦0.7, 0.01≦z≦0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1<v<0.8, 0<w<0.8, 0.05<x<0.8, 0<y<0.3, 0.05<z<0.8 for v+w+x+y+z=1 and then converting the polymeric preceramic layer into a ceramic diffusion barrier by thermal methods.

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