Method of forming a cavity and SOI in a semiconductor substrate

Details Method of forming a cavity and SOI in a semiconductor substrate Method of forming a cavity and SOI in a semiconductor substrate

2005-10-18

2005-10-18

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S735000, C438S749000

Reexamination Certificate

active

06955988

ABSTRACT:
A semiconductor substrate (1) comprising an SOI (2) formed therein. The semiconductor substrate (1) comprises first and second wafers (4,6) which are directly bonded together along a bond interface (9). Prior to bonding the wafers (4,6), a portion (15) of the second wafer (6) is ion implanted to form a p+ region for facilitating selective etching thereof to form a buried cavity (16), in which a buried insulating layer is subsequently formed under a portion (10) of the first wafer (4) for forming the SOI (2). After bonding of the first and second wafers (4,6) a communicating opening (20) is etched through the first wafer (4) to the bond interface (9), and the selectively etchable portion (15) is etched through the communicating opening (20) to form the buried cavity (16). The buried cavity (16) is then filled with deposited oxide to form the buried insulating layer (11). An isolation trench (12) is formed through the first wafer (4) to the buried insulating layer (11) around the portion (10) for isolating the SOI (2) from the remainder of the first wafer (4).

REFERENCES:
patent: 6004406 (1999-12-01), Kobayashi et al.
patent: 6417075 (2002-07-01), Haberger et al.

Affiliated with

Also associated with

Rating

Method of forming a cavity and SOI in a semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a cavity and SOI in a semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a cavity and SOI in a semiconductor substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3463984