Method of forming a capacitor of an integrated circuit device

Details Method of forming a capacitor of an integrated circuit device Method of forming a capacitor of an integrated circuit device

2005-08-16

2005-08-16

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S627000

Reexamination Certificate

active

06930013

ABSTRACT:
A method of forming a capacitor having a lower electrode, an upper electrode, and a dielectric layer of an integrated circuit device is provided. A metal compound is adsorbed on the lower electrode by using a gaseous metal compound. A physisorbed metal compound on the lower electrode is purged by using an inert gas. The metal compound adsorbed on the lower electrode is oxidized with an oxidation gas to form a metal oxide. A gaseous product formed by oxidizing the metal compound is purged. Above steps are repeated to form a diffusion barrier layer of the metal oxide. The dielectric layer is formed of Ta2O5on the diffusion barrier layer. A heat treatment is performed for the dielectric layer comprised of Ta2O5under oxidation atmosphere. The steps are performed in a single atomic layer deposition chamber.

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Y. Kim et al Substrate Dependence on the Optical Properties of AI2O3 Films Grown by Atomic Layer Deposition Applied Phisics Letters, 71 (25) Dec. 1997 American Institute of Physics pp. 3604-3606.

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