Method of forming a capacitor and a capacitor construction

Details Method of forming a capacitor and a capacitor construction Method of forming a capacitor and a capacitor construction

2001-06-06

2004-07-13

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S308000

Reexamination Certificate

active

06762450

ABSTRACT:

TECHNICAL FIELD
This invention relates generally to capacitor formation in semiconductor wafer processing, and to resultant capacitor constructions.
BACKGROUND OF THE INVENTION
As DRAMs increase in memory cell density, there is a continuing challenge to maintain sufficiently high storage capacitance despite decreasing cell area. Additionally, there is a continuing goal to further decrease cell area.
The principal way of increasing cell capacitance is through cell structure techniques. Such techniques include three-dimensional cell capacitors, such as trenched or stacked capacitors. This invention concerns stacked capacitor cell constructions, including what are commonly known as crown or cylindrical container stacked capacitors.


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