Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-04-18
2006-04-18
Everhart, Caridad M. (Department: 2825)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S700000, C438S736000, C438S952000
Reexamination Certificate
active
07030044
ABSTRACT:
A method of forming a multi-layer stack over a low-k dielectric layer is disclosed, wherein the multi-layer stack provides an improved anti-reflective effect and an enhanced protection of the underlying low-k dielectric material during the chemical mechanical polishing process. The multi-layer stack includes silicon dioxide based sub-layers, which may be formed in a highly efficient, non-expensive plasma enhanced deposition method, wherein the optical characteristics may be adjusted by varying a ratio of silane and nitrogen oxide during the deposition.
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International Search Report for PCT/US 03/35272.
Hohage Joerg
Mauersberger Frank
Ruelke Hartmut
Werner Thomas
Advanced Micro Devices , Inc.
Everhart Caridad M.
Williams Morgan & Amerson P.C.
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