Method of forming a bonding portion

Details Method of forming a bonding portion Method of forming a bonding portion

1995-03-27

1996-12-10

Arbes, Carl J.

Metal working

Method of mechanical manufacture

Electrical device making

29 58, 269 8, 279128, 361234, H01R 4300

Patent

active

055818749

ABSTRACT:
A process apparatus comprises a process chamber containing a semiconductor wafer, a gas being able to be supplied to and exhausted from the process chamber, a support table for supporting an object to be processed, which is contained in the process chamber, a gas supply system for supplying the gas into the process chamber, and a gas exhaust system for exhausting the gas from the process chamber. An inner wall of the process chamber and the support table are formed of an aluminum-based material, and the surfaces of these are brought into contact with a fluorine-containing gas, thereby coating the surfaces with AlF.sub.3.

REFERENCES:
patent: 4384918 (1983-03-01), Abe
patent: 4645218 (1987-02-01), Ooshio et al.
patent: 5055964 (1991-10-01), Logan et al.
patent: 5099571 (1992-03-01), Logan et al.
patent: 5179498 (1993-01-01), Hongoh
patent: 5213349 (1993-05-01), Elliott
patent: 5255153 (1993-10-01), Nozawa et al.
patent: 5452510 (1995-09-01), Barnes et al.
patent: 5463525 (1995-10-01), Barnes et al.

Affiliated with

Also associated with

Rating

Method of forming a bonding portion does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a bonding portion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a bonding portion will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-416818