Method of forming a bonding pad

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438613, 438614, 438615, 438616, 438617, 438666, H01L 2144

Patent

active

058343652

ABSTRACT:
A structure and a process for forming an improved bonding pad which allows better bonding between a bond wire and a metal bonding pad. Stripes are formed on a substrate. A conformal dielectric layer, a conformal barrier layer and a metal layer are formed over the stripes. A passivation layer with a window is formed defining a bonding pad area. The stripes promote an irregular surface in the barrier and metal layers which reduce stress between the dielectric layer, the barrier layer and the metal layer. Also, the irregular surfaces increase the barrier metal adhesion to the dielectric layer, reduce bond pad peel off, and increase bonding yields.

REFERENCES:
patent: 4600658 (1986-07-01), Anderson et al.
patent: 4800177 (1989-01-01), Nakamae
patent: 5057447 (1991-10-01), Paterson
patent: 5309025 (1994-05-01), Bryant et al.

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