Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-25
1998-11-10
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438613, 438614, 438615, 438616, 438617, 438666, H01L 2144
Patent
active
058343652
ABSTRACT:
A structure and a process for forming an improved bonding pad which allows better bonding between a bond wire and a metal bonding pad. Stripes are formed on a substrate. A conformal dielectric layer, a conformal barrier layer and a metal layer are formed over the stripes. A passivation layer with a window is formed defining a bonding pad area. The stripes promote an irregular surface in the barrier and metal layers which reduce stress between the dielectric layer, the barrier layer and the metal layer. Also, the irregular surfaces increase the barrier metal adhesion to the dielectric layer, reduce bond pad peel off, and increase bonding yields.
REFERENCES:
patent: 4600658 (1986-07-01), Anderson et al.
patent: 4800177 (1989-01-01), Nakamae
patent: 5057447 (1991-10-01), Paterson
patent: 5309025 (1994-05-01), Bryant et al.
Chung Hsien-Dar
Hsu Bill Y. B.
Ming-Tsung Liu
Wu Dev-Yuan
Niebling John
United Microelectronics Corp.
Zarneke David A.
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