Method of forming a barrier metal in a semiconductor device

Details Method of forming a barrier metal in a semiconductor device Method of forming a barrier metal in a semiconductor device

2005-07-05

2005-07-05

Baumeister, B. William (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S672000, C438S674000, C438S687000

Reexamination Certificate

active

06913995

ABSTRACT:
Disclosed is a method of forming a barrier metal in the semiconductor device. The method comprises the steps of a) patterning a porous film on a base layer to form a via hole, b) depositing a CVD TiN film on the entire structure including the via hole, c) implementing a plasma treatment process using N2+H2, d) repeatedly implementing the steps (b) and (c) in order to bury only the pores formed on the surface of the porous film with CVD TiN, and e) forming a barrier metal on the entire structure including the via hole. Therefore, the present invention can prevent introduction of the conductive material into the base layer in a subsequent process.

REFERENCES:
patent: 6017811 (2000-01-01), Winton et al.
patent: 6265321 (2001-07-01), Chooi et al.
patent: 6309957 (2001-10-01), Tu et al.
patent: 6323121 (2001-11-01), Liu et al.
patent: 6413879 (2002-07-01), Maeda
patent: 6537896 (2003-03-01), Catabay et al.
patent: 6566260 (2003-05-01), Gupta et al.
patent: 6645864 (2003-11-01), Lin et al.
Official Action, Korean Intellectual Property Office, issued in connection with Korean Patent Application Serial No. 2002-84338, dated Sep. 21, 2004, 2 pages.

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