Method of forming a barrier layer

Details Method of forming a barrier layer Method of forming a barrier layer

2000-11-03

2002-06-11

McDonald, Rodney G. (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192150, C438S582000, C438S648000, C438S656000, C438S685000

Reexamination Certificate

active

06402907

ABSTRACT:

This invention relates to a method of forming a barrier layer in a high aspect ratio recess in a dielectric layer on a semiconductor wafer.
It is well known to form barrier layers on semiconductor wafers to prevent the metalisation material, e.g. aluminium alloy or copper, spiking into the underlying dielectric layer or to prevent WF
6
(used in the deposition of tungsten) reacting with a titanium layer. Commonly these comprise a Ti seed layer and an overlying layer of stoichiometric TiN. Many methods have been proposed for forming such layers but they nearly all run into considerable difficulties when trying to form a satisfactory barrier layer deep in a high aspect ratio recess within the dielectric layer. As the features become smaller and smaller in semiconductor wafers, the aspect ratio of such recesses increases. Normally the sputtering distances for Ti and TiN are around 45 mm and sputtering typically takes place at a pressure around 5 millitorr. Due to problems of directionality, particularly when nitrogen is present to form TiN, the barrier layers formed in high aspect ratio holes are often not very successful.


REFERENCES:
patent: 0 512 296 (1992-11-01), None
patent: 2 314 681 (1998-01-01), None

Affiliated with

Also associated with

Rating

Method of forming a barrier layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a barrier layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a barrier layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2953541