Method of formation of thin bonded ultra-thin wafers

Details Method of formation of thin bonded ultra-thin wafers Method of formation of thin bonded ultra-thin wafers

1995-03-01

1998-12-01

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438457, 438973, H01L 2176

Patent

active

058438327

ABSTRACT:
A technique of bonding a thin wafer layer to a substrate. The wafer is blown dry using an inert gas to prevent it from being damaged, while still ensuring that it dries completely. The initial bonding is done by orienting crystallographic axes, and then allowing the wafers to adhere to one another slowly. The contact wave is prevented from spreading, by a divider between the two wafers. The wafers are allowed to adhere to one another slowly to form a bond. The bond is strengthened by annealing.

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