Method of formation of polycide in a semiconductor IC device

Details Method of formation of polycide in a semiconductor IC device Method of formation of polycide in a semiconductor IC device

1997-01-22

1998-05-26

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438655, 438657, 438664, H01L 21283, H01L 21324

Patent

active

057563926

ABSTRACT:
An method for the formation of polycide used for the gate electrode or interconnection metallization in semiconductor integrated circuit devices has been developed. The polycide is formed from doped amorphous silicon deposited from SiH.sub.4 and PH.sub.3 and tungsten silicide deposited from dichlorosilane (SiH.sub.2 Cl.sub.2 and WF.sub.6, followed by conventional RIE patterning. The key feature, annealing of the polycide structure by a combination of RTA (Rapid Thermal Anneal) in a nitrogen ambient, and then a furnace anneal in an oxygen ambient prevents deleterious sidewall growth on the polycide structure and results in a highly manufacturable process having high yield.

REFERENCES:
patent: 4443930 (1984-04-01), Huang et al.
patent: 4833099 (1989-05-01), Woo
patent: 5234850 (1993-08-01), Liao
patent: 5306951 (1994-04-01), Lee et al.
patent: 5364803 (1994-11-01), Lur et al.
patent: 5382533 (1995-01-01), Ahmad et al.
patent: 5434096 (1995-07-01), Chu et al.
Yoo, C., et al., "Si/W Ratio Changes and Film Peeling during Polycide Annealing", Japanese J. Appl. Phys., vol. 29, No. 11, Nov. 1990, pp. 2535-2540, Nov. 1990.
Hara, T., et al., "Tungsten Silicide Films ... ", J. Electrochem. Soc., vol. 136, No. 4, Apr. 1989, pp. 1177-1180, Apr. 1989.
Wolf, S., et al., Silicon Processing, 1986, Lahice Press, vol. 1, pp. 56-58, 175-182, pp. 384-397, 1986.
Yen, H., et al., "Thermal treatment and Underlayer ... ", 1995 Int. symp. VLSI Tech., Syst., and Appl., May-Jun. 1995. pp. 176-179, 31 May-Jun. 2, 1995.

Affiliated with

Also associated with

Rating

Method of formation of polycide in a semiconductor IC device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of formation of polycide in a semiconductor IC device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of formation of polycide in a semiconductor IC device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1959549