Method of formation of coherent wavy nanostructures (variants)

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

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C438S760000, C438S762000, C438S763000, C438S765000, C438S766000, C257SE21332

Reexamination Certificate

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07977252

ABSTRACT:
The method for forming wavelike coherent nanostructures by irradiating a surface of a material by a homogeneous flow of ions is disclosed. The rate of coherency is increased by applying preliminary preprocessing steps.

REFERENCES:
patent: 5530272 (1996-06-01), Kudo et al.
patent: 2 173 003 (2001-08-01), None
patent: 2 180 885 (2002-03-01), None
patent: 2 240 280 (2004-11-01), None
Karen, A. et al. (1995) “Quantitative Investigation of the O2+-Induced Topography of GaAs and Other III-V Semiconductors: an STM Study of the Ripple Formation and Suppression of the Secondary Ion Yield Change by Sample Rotation,”Surface and Interface Analysis, vol. 23, pp. 506-513.
Vajo, J.J. et al. (1996) “Influence of O2+Energy, Flux, and Fluence on the Formation and Growth of Sputtering-Induced Ripple Topography on Silicon,”J. Vac. Sci. Technol. A, 14(5):2709-2720.
Scott, K.L. et al. (2000) “Pattern Generators and Microcolumns for Ion Beam Lithography,”J. Vac. Sci. Technol. B, 18(6):3172-3176.

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