Method of foming a micromechanical structure

Details Method of foming a micromechanical structure Method of foming a micromechanical structure

2004-08-13

2009-06-02

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S644000, C438S682000, C257SE21130, C257SE21160

Reexamination Certificate

active

07541280

ABSTRACT:
A method of forming a micromechanical structure, wherein at least one micromechanical structural layer is provided above a substrate. The micromechanical structural layer is sustained between a lower sacrificial silicon layer and an upper sacrificial silicon layer, wherein a metal silicide layer is formed between the lower and upper sacrificial silicon layers to increase interface adhesion therebetween. The upper sacrificial silicon layer, the metal silicide layer and the lower sacrificial silicon layer are then removed to release the micromechanical structural layer.

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