Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1997-12-29
1999-03-02
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
4272557, 438624, 438763, C23C 1640
Patent
active
058767983
ABSTRACT:
Films of fluorinated silicon oxide, suitable for use as inter-metal dielectrics, have been deposited by means of CVD at reduced pressure using fluorotriethoxysilane (FTES) and tetra-exthyloxysilane (TEOS) as the precursors, together with ozone (mixed with oxygen). If tight control over the deposition conditions is exercised, high quality films having no surface damage and good step coverage, with no trapped voids, can be obtained. In a second embodiment of the invention, the TEOS is omitted and only FTES is used. Among the most important deposition parameters we include temperature at 400-500.degree. C., pressure at 200-260 torr, ozone concentration (in oxygen) 8-12%, and an ozone:precursor ratio of 3-10 to 1 weight percent. In a third embodiment, a stacked layer is formed, consisting of at least one fluorinated silicon oxide layer and one silicon dioxide layer, deposited within the same deposition process by changing the TEOS or the FTES flow.
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Ackerman Stephen B.
Beck Shrive
Chartered Semiconductor Manufacturing Ltd.
Meeks Timothy
Saile George O.
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