Method of film deposition using activated precursor gases

Details Method of film deposition using activated precursor gases Method of film deposition using activated precursor gases

2005-01-04

2005-01-04

Meeks, Timothy (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of coating supply or source outside of primary...

C427S564000, C427S576000, C427S586000, C427S255391, C427S255392, C427S255394, C427S252000, C427S253000, C427S255700, C438S680000, C438S681000, C438S685000

Reexamination Certificate

active

06838125

ABSTRACT:
A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.

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