Method of film deposition, and fabrication of structures

Details Method of film deposition, and fabrication of structures Method of film deposition, and fabrication of structures

2006-03-21

2006-03-21

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S381000, C438S688000, C257S300000, C257S532000, C423S600000

Reexamination Certificate

active

07015152

ABSTRACT:
A method of fabricating aluminum oxide films utilizing aluminum alkoxide precursors is described. The aluminum oxide film is formed by (a) providing an aluminum alkoxide precursor that is dissolved, emulsified or suspended in a liquid; (b) providing a vapor generated from the aluminum alkoxide precursor; and (c) depositing an aluminum oxide film on the substrate at a temperature greater than 500° C.

REFERENCES:
patent: 4097314 (1978-06-01), Schlesier et al.
patent: 5431734 (1995-07-01), Chapple-Sokol et al.
patent: 5540777 (1996-07-01), Barbee et al.
patent: 5648113 (1997-07-01), Barbee et al.
patent: 5728222 (1998-03-01), Barbee et al.
patent: 6037003 (2000-03-01), Gordon et al.
patent: 6312565 (2001-11-01), Misra et al.
Yom et al, Growth of gamma alumina thin films on silicon by MOCVD, Thin Solid Films 1992, pp. 72-75.
Eble, R., et al., “Low Temperature Aluminum Oxide Deposition Using Trimethylaluminum”,Journal of Electronic Materials, vol. 12, No. 3, pp. 587-601 (1983).
Kim, J.S., et al., “Fabrication of Aluminum Oxide Thin Films by a Low-Pressure Metalorganic Chemical Vapor Deposition Technique”,App. Phys. Lett., 62(7), Feb. 15, 1993.
Fournier, J., et al., “Preparation and Characterization of Thin Films of Alumina by Metal-Organic Chemical Vapor Deposition”,Mat. Res. Bull., vol. 23, pp. 31-36, 1988.
Klein, T.M., et al. “Evidence of Aluminum Silicate Formation During Chemical Vapor Deposition of Amorphous A12O3 Thin Films on Si (100)”,Applied Physics Letters, vol. 75, No. 25, pp. 4001-4003, 1999.
Lo, S.-H, et al., “Quantum-Mechanical Modelling of Electron Tunneling Current From the Inversion Layer of Ultra-Thin-Oxide nMOSFET's”,IEEE Electron Device Letters, vol. 18, No. 5, pp. 209-211, May 1997.
Mutoh, H., et al., “Multilayer Metallization with Planar Interconnect Structure Utilizing CVD A12O3 Film”,J. Electrochem. Soc.: Solid-Science and Technology, vol. 12, No. 7, pp. 987-992, Jul. 1975.
Yom, S.S., et al., “Growth of ?-A12O3 Thin Films on Silicon by Low Pressure Metal-Organic Chemical Vapour Deposition”,Elsevier Sequoia, 213, pp. 72-75, 1992.

Affiliated with

Also associated with

Rating

Method of film deposition, and fabrication of structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of film deposition, and fabrication of structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of film deposition, and fabrication of structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3547325