Method of filling contacts in semiconductor devices

Details Method of filling contacts in semiconductor devices Method of filling contacts in semiconductor devices

1992-06-16

1994-12-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437203, 437192, H01L 21283

Patent

active

053710428

ABSTRACT:
An improved method of filling vias and openings in semiconductor devices comprises first faceting the top of the openings, depositing in sequence a barrier layer, as of TiN, treating the barrier layer to reduce its porosity, depositing a titanium-containing wetting layer, sputter depositing a first layer of aluminum at low temperatures and sputter depositing a second layer of aluminum at high temperatures to fill the opening and planarize the layer. The improved method is carried out preferably in a multichamber sputtering system.

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