Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-23
2000-06-06
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, 438688, 438660, H01L 2144
Patent
active
060718102
ABSTRACT:
A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.
REFERENCES:
patent: 5227329 (1993-07-01), Kobayashi et al.
patent: 5578523 (1996-11-01), Fiordalice et al.
H. Horie et al., "Novel High Aspect Ratio Aluminum Plug for Logic/DRAM LSIs Using Polysilicon-Aluminum Substitute (PAS)", IEDM 96, pp. 946-948 (1996).
M. Imai et al., "High Aspect Ratio Aluminum Plug by Polysilicon-Aluminum Substitute", Extended Abstracts, 3a-E-2, p. 772 (1997).
Hasunuma Masahiko
Hayasaka Nobuo
Kaneko Hisashi
Katata Tomio
Okumura Katsuya
Chaudhuri Olik
Kabushiki Kaisha Toshiba
Peralta Ginette
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