Method of filling a trench in a substrate

Details Method of filling a trench in a substrate Method of filling a trench in a substrate

2011-05-10

2011-05-10

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S758000

Reexamination Certificate

active

07939419

ABSTRACT:
A method of filling a trench includes: providing a substrate having an upper surface, and a trench extending therein from the upper surface; forming a deposition layer on the substrate in a manner in which the layer partially fills the trench and has a portion which overhangs the trench at the upper surface of the substrate; etching, in a processing chamber, the portion of the deposition layer which overhangs the trench, including by inducing a reaction in the processing chamber using plasma; and subsequently depositing material on the substrate within the partially filled trench, including by inducing a reaction in the processing chamber using plasma.

REFERENCES:
patent: 7056827 (2006-06-01), Cha et al.
patent: 2005/0136686 (2005-06-01), Kim et al.
patent: 2006/0183320 (2006-08-01), Cha et al.
patent: 1020050057964 (2005-06-01), None

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