Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2008-12-19
2010-12-28
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S433000, C438S424000, C438S427000, C438S437000
Reexamination Certificate
active
07858492
ABSTRACT:
A method of filling a trench in a substrate ensures that a void or seam is not left in the material occupying the trench. First, a preliminary insulating layer is formed so as to extend contiguously along the bottom and sides of the trench and along an upper surface of the substrate. Impurities are then implanted into a portion of the preliminary insulating layer adjacent the top of the first trench to form a first insulating layer having a doped region and an undoped region. The doped region is removed to form a first insulating layer pattern at the bottom and sides of the first trench, and which first insulating layer pattern defines a second trench. The second trench is then filled with insulating material.
REFERENCES:
patent: 6245684 (2001-06-01), Zhao et al.
patent: 6780731 (2004-08-01), Tu et al.
patent: 7169676 (2007-01-01), Zhong
patent: 2003/0230549 (2003-12-01), Buchanan et al.
patent: 2006/0145287 (2006-07-01), Kim
patent: 2006/0166419 (2006-07-01), Shimoyama et al.
patent: 0406180 (2003-11-01), None
patent: 0624327 (2006-09-01), None
Baek Eun-Kyung
Byun Kyung-Mun
Choi Jong-Wan
Hong Eunkee
Kim Young-Sun
Dehne Aaron A
Nguyen Ha Tran T
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
LandOfFree
Method of filling a trench and method of forming an... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of filling a trench and method of forming an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of filling a trench and method of forming an... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4231336