Method of filling a contact hole in a semiconductor device using

Details Method of filling a contact hole in a semiconductor device using Method of filling a contact hole in a semiconductor device using

1997-06-25

1998-11-17

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438672, 438639, 148DIG19, H01L 2144

Patent

active

058376089

ABSTRACT:
The present invention discloses a method of forming a plug in a semiconductor device. Metals having different properties are employed to induce the growth of the metals in fixed direction within the contact hole so as to prevent an over-etching which is generated due to a difference of density depending on the growth direction of the metal in the contact hole. Upon a full-surface etching process for forming a plug, the step difference generating on top of the contact hole can be minimized, thereby improving the step coverage of the metal during a subsequent metalization process and increasing the electrical characteristic and reliability of the device.

REFERENCES:
patent: 5260232 (1993-11-01), Muroyama et al.
patent: 5502008 (1996-03-01), Hayakawa et al.

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