Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1997-09-17
1999-02-02
Kunemund, Robert
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
117932, 252950, C30B 2906
Patent
active
058660941
ABSTRACT:
The object of the present invention affords a method of feeding dopant and a dopant composition used therein for easily preparing single crystals having a desired doping concentration during semiconductor substrate fabrication.
In accordance with the present invention, a water solution containing oxides of the dopant is first added to the liquid containing colloidal silica. The colloidal silica can adsorb the oxides of the dopant to form a dopant composition. Around rod-shaped polysilicon, that is polysilicon rod, the dopant composition is discontinuously coated on the periphery of the polysilicon rods spaced at constant intervals and then dried. When the polysilicon rods are melted in an apparatus for manufacturing single crystals by a heater, dopant is protected by the glassed silica without evaporation. Accordingly, the dopant can be provided at a predetermined concentration to sustain the grown single crystals having a doping concentration as required.
REFERENCES:
patent: 3514348 (1970-05-01), Yingku
patent: 3658584 (1972-04-01), Schmidt
patent: 3660156 (1972-05-01), Schmidt
patent: 4571366 (1986-02-01), Thomas
patent: 4749615 (1988-06-01), Bonny
Komatsu Electronic Metals Co. Ltd.
Kunemund Robert
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