Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-07-26
1997-12-23
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 18, 117912, C30B 1504
Patent
active
057003211
ABSTRACT:
The object of the present invention affords a method of feeding dopant and a dopant composition used therein for easily preparing single crystals having a desired doping concentration during semiconductor substrate fabrication.
In accordance with the present invention, a water solution containing oxides of the dopant is first added to the liquid containing colloidal silica. The colloidal silica can adsorb the oxides of the dopant to form a dopant composition. Around rod-shaped polysilicon, that is polysilicon rod, the dopant composition is discontinuously coated on the periphery of the polysilicon rods spaced at constant intervals and then dried. When the polysilicon rods are melted in an apparatus for manufacturing single crystals by a heater, dopant is protected by the glassed silica without evaporation. Accordingly, the dopant can be provided at a predetermined concentration to sustain the grown single crystals having a doping concentration as required.
REFERENCES:
patent: 2892739 (1959-06-01), Rusler
patent: 5242531 (1993-09-01), Klingshirn et al.
patent: 5360480 (1994-11-01), Altekruger
patent: 5427056 (1995-06-01), Imai et al.
patent: 5488923 (1996-02-01), Imai et al.
Garrett Felisa
Komatsu Electronic Metals Co. Ltd.
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