Method of fabrication SiGe heterojunction bipolar transistor

Details Method of fabrication SiGe heterojunction bipolar transistor Method of fabrication SiGe heterojunction bipolar transistor

2006-07-11

2006-07-11

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S318000, C438S341000, C438S349000, C438S489000

Reexamination Certificate

active

07074685

ABSTRACT:
A method of fabricating a semiconductor device includes a SiGe(C) heterojunction bipolar transistor using a non-selective epitaxial growth where an insulating layer is formed on a substrate and a layer structure including a conductive layer is provided on the insulating layer. A transistor area opening is etched through the conductive layer, and an SiGe base layer is deposited inside the transistor area opening. An insulator is formed on an upper surface so as to fill the transistor area opening, wherein prior to filling the opening, a nitride layer is formed as an inner layer of the transistor area opening.

REFERENCES:
patent: 5101256 (1992-03-01), Harame et al.
patent: 6169007 (2001-01-01), Pinter
patent: 6664574 (2003-12-01), Azam et al.
patent: 6806158 (2004-10-01), Sukegawa et al.
patent: 2002/0000664 (2002-01-01), Cheng et al.

Affiliated with

Also associated with

Rating

Method of fabrication SiGe heterojunction bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabrication SiGe heterojunction bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabrication SiGe heterojunction bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3571679