Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-01-22
1998-12-22
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438656, 438688, H01L 2128
Patent
active
058519203
ABSTRACT:
A metallization system (19) for a semiconductor component (20) includes depositing a dielectric layer (12) over a substrate (10), etching a via (14) in the dielectric layer (12), sputtering a metal layer (17) of aluminum, copper, and tungsten over the dielectric layer (12) and in the via (14), and sputtering a different metal layer (18) of aluminum and copper over the first metal layer (17) and in the via (14). The metallization system (19) reduces the reliability issues associated with electromigration and stress migration while enhancing the ability to fill vias with large aspect ratios.
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Cronin Wayne A.
Grivna Gordon M.
Koetz Kirby F.
Taylor Donald S.
Bilodeau Thomas G.
Chen George C.
Motorola Inc.
Niebling John
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