Method of fabrication of display pixels driven by silicon thin f

Details Method of fabrication of display pixels driven by silicon thin f Method of fabrication of display pixels driven by silicon thin f

1997-09-29

1999-11-30

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438 30, 438487, 438535, 257 66, 257 70, 257 72, 345 55, 345 87, 345 90, 345 92, H01L 21268

Patent

active

059941740

ABSTRACT:
Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

REFERENCES:
patent: 5614730 (1997-03-01), Nakazawa et al.

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