Method of fabrication of aluminum contacts through a thick insul

Details Method of fabrication of aluminum contacts through a thick insul Method of fabrication of aluminum contacts through a thick insul

1985-04-10

1986-06-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29580, 29591, 156652, 156656, 156657, 156662, 357 71, 427 88, 427 90, C23F 102, B44C 122, C03C 1500, H01L 21306

Patent

active

045928029

ABSTRACT:
In order to form aluminum interconnections through a thick insulating layer in an integrated circuit without any attendant danger of rupture at the level of the contact openings in the insulating layer between the interconnection layer and the substrate, the contact openings are first filled with polycrystalline silicon or a metal having high covering power and deposited by chemical decomposition in gas phase, whereupon the aluminum is deposited by vacuum evaporation.

REFERENCES:
patent: 4520041 (1985-05-01), Aoyama et al.
patent: 4544445 (1985-10-01), Jeuch et al.

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