Method of fabrication of a substrate for an epitaxial growth

Details Method of fabrication of a substrate for an epitaxial growth Method of fabrication of a substrate for an epitaxial growth

2007-06-19

2007-06-19

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S095000, C117S089000, C117S091000, C117S915000, C117S930000

Reexamination Certificate

active

10827437

ABSTRACT:
The present invention relates to a method of fabrication of a substrate for an epitaxial growth. A relaxed epitaxial base layer is obtained on an auxiliary substrate. The invention allows the fabrication of substrates with a more efficient epitaxial growth of a material with a desired lattice parameter on another material with a different lattice parameter. The material can be grown with a high thermodynamic and crystallographic stability. At least a part of the epitaxial base layer is transferred onto a carrier substrate, forming a base substrate, and growing the material of the epitaxial base layer is further grown on the carrier substrate.

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