Method of fabrication of a light image detector and a two-dimens

Details Method of fabrication of a light image detector and a two-dimens Method of fabrication of a light image detector and a two-dimens

1986-07-16

1988-04-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156656, 156657, 156662, 250211R, 357 2, 357 49, 357 58, 358212, 437 3, H01L 2714, H01L 3100, H01L 21306, B44C 122

Patent

active

047362340

ABSTRACT:
In a light image detector, a substrate is covered with a first layer of conductive material on which is formed a two-dimensional matrix array of photodiodes in the form of pads arranged in rows and columns and each comprising a layer of amorphous semiconductor material doped with a predetermined type (n-type or p-type), a layer of undoped amorphous semiconductor material, a layer of amorphous semiconductor material doped with another predetermined type (n-type or p-type), a second layer of conductive material, each photodiode being insulated from adjacent photodiodes by means of insulating material. On the insulating material, columns of material are disposed along the columns of photodiodes and are each formed by a layer of metallic material and a layer of doped amorphous semiconductor material. Connection elements are each connected to a photodiode through the layer of conductive material of the photodiode, are located in proximity to a column and each formed by a layer of metallic material and a layer of doped amorphous semiconductor material. Rows of material are disposed along the lines of photodiodes and overlap the columns as well as at least one connection element at each point of intersection of a row and a column. Each row is formed by a layer of undoped amorphous semiconductor material, an insulating layer and a layer of metallic material.

REFERENCES:
patent: 4453184 (1984-06-01), Hanakawa et al.
IEEE Electron Device Letters, vol. EDL-4, No. 10, Oct. 1983, pp. 375-376, IEEE, New York, U.S.; S. Miura et al.: "A Monolithically Integrated AlGaAs/GaAs p-i-n/FET Photoreceiver by MOCVD".
Extended Abstracts of the 15th Conference on Solid State Devices and Material, Tokyo, 1983, pp. 201-204, Tokyo, JP; F. Okumura, et al.: "Amorphous Si:H Linear Image Sensor Operated by a-Si:H TFT Array", pp. 202-203: paragraph 3; FIG. 4.
Extended Abstracts of the 26th International Conference of Solid State Devices and Material, Tokyo, 1984, pp. 325-328, Tokyo, JP; S. Uya et al.: "A High Resolution CCD Image Sensor Overlaid With an a-SI:H Photoconductive Layer", pp. 326,327: paragraph 3; FIGS. 1,3.

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