Method of fabrication metal-electrode in semiconductor device

Details Method of fabrication metal-electrode in semiconductor device Method of fabrication metal-electrode in semiconductor device

1991-12-20

1993-08-31

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437194, 437237, 205124, H01L 21283

Patent

active

052408680

ABSTRACT:
A method of fabricating a metal electrode of a semiconductor device that includes a substrate with unanodized and anodized metal layers thereon includes the steps of forming a first metal layer, which is anodizable, to a first predetermined thickness on a substrate; forming and patterning a second metal layer, which is not anodizable, to a second predetermined thickness so as to act as a mask on the first metal layer; depositing a third metal layer, that may be anodizable, to a third predetermined thickness; and forming a flat surface on the third layer by anodic oxidation. Various preferred embodiments and relationships between thickness of each layer for flattening by anodic oxidation are also given.

REFERENCES:
patent: 3864217 (1975-02-01), Takahata et al.
patent: 3939047 (1976-02-01), Tsunemitsu et al.
patent: 4098637 (1978-07-01), Bell
patent: 4158613 (1979-06-01), Sogo
patent: 4432134 (1984-02-01), Jones et al.
patent: 4469568 (1984-09-01), Kato et al.

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