Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2006-09-26
2006-09-26
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C438S373000, C438S374000, C438S375000, C438S514000, C438S515000
Reexamination Certificate
active
07112501
ABSTRACT:
A fabrication process for a silicon-on-insulator (SOI) device includes defining an active region in an SOI substrate, doping the entire active region with an impurity of a given conductive type, masking a main part of the active region, and doping the peripheral parts of the active region at least two additional times with an impurity of the same conductive type, preferably using different doping parameters each time. The additional doping creates a channel stop in the peripheral parts of the active region, counteracting the tendency of the transistor threshold voltage to be lowered in the peripheral parts of the active region, thereby mitigating or eliminating the unwanted subthreshold hump often found in the transistor operating characteristics of, for example, fully depleted SOI devices.
REFERENCES:
patent: 6255694 (2001-07-01), Mandelman et al.
patent: 6670682 (2003-12-01), Mouli
patent: 6770517 (2004-08-01), Nakaoka et al.
patent: 2003/0227058 (2003-12-01), Wang et al.
patent: 2001-053284 (2001-02-01), None
Oki Electric Industry Co. Ltd.
Rabin & Berdo PC
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