Method of fabricating X-ray mask and method of fabricating...

Details Method of fabricating X-ray mask and method of fabricating... Method of fabricating X-ray mask and method of fabricating...

2007-03-27

2007-03-27

Glick, Edward J. (Department: 2882)

X-ray or gamma ray systems or devices

Specific application

Lithography

C430S005000

Reexamination Certificate

active

10627611

ABSTRACT:
In fabricating an X-ray mask, a chromium oxide film serving as an etching stopper is formed on a diamond film serving as an X-ray transmitter. Then, a diamond layer serving as a first X-ray absorber is formed on the chromium oxide film. Thereafter, a tungsten layer serving as a second X-ray absorber is formed on the diamond layer. Consequently, the diamond layer and the tungsten layer form an X-ray absorber having a laminated structure. When the X-ray absorber has a laminated structure including substances having different compositions, the transmittance and the phase shift quantity of the overall X-ray absorber can be readily adjusted. Thus, a method of fabricating an X-ray mask providing improved resolution of the pattern of a semiconductor device or the like is obtained.

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Computer translation of JP 09-043829.
K. Fujii et al, “Optimum Phase Condition for Low-Contrast X-Ray Masks”,Jpn. J. Appl. Phys.,Dec. 1999, pp. 7076-7079, vol. 38 Part 1 No. 12B.

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