Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Patent
1997-08-14
1998-11-24
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
438320, 438343, H01L 21331
Patent
active
058406123
ABSTRACT:
A heterojunction bipolar transistor with a vertically integrated profile includes a substrate layer, a collector contact layer, a collector layer, a base layer and an emitter layer, formed from AlGaAs, etched to form an emitter mesa leaving a relatively thin passivating layer, adjacent the emitter mesa. The base metal contacts are formed on the passivating layer, resulting in a wider bandgap, thus minimizing surface recombination velocity at the emitter-base junction and increasing the overall gain (.beta.) of the device. The base metal contacts are formed by evaporating a p-ohmic metal onto the n-type passivation layer. The p-ohmic contacts are annealed, resulting in p-type metal diffusion through the passivating layer and reaction with the base layer, resulting in ohmic contacts.
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Oki Aaron K.
Streit Dwight C.
Tran Liem T.
Umemoto Donald K.
Nguyen Tuan H.
TRW Inc.
Yatsko Michael S.
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