Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-08-06
2009-12-29
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S156000, C438S268000, C438S944000, C438S951000, C257SE29274
Reexamination Certificate
active
07638374
ABSTRACT:
A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.
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Hu Tarng-Shiang
Lin Tsung-Hsien
Shen Yu-Yuan
Wang Yi-Kai
Industrial Technology Research Institute
Jianq Chyun IP Office
Nguyen Duy T
Pham Thanh V
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