Method of fabricating transistor in semiconductor device

Details Method of fabricating transistor in semiconductor device Method of fabricating transistor in semiconductor device

2004-12-30

2008-10-14

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S592000, C438S923000, C257SE21438

Reexamination Certificate

active

07435669

ABSTRACT:
A method of fabricating a transistor in a semiconductor device. A gate oxide layer and a gate are formed on a semiconductor substrate. An oxide layer and a silicon nitride layer are stacked on the substrate. The stacked oxide and silicon nitride layers are etched back to expose a surface of the substrate. The silicon nitride layer is removed to form a gate sidewall spacer. Impurity ions are implanted into the substrate through the exposed surface of the substrate.

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patent: 6235597 (2001-05-01), Miles
patent: 6635966 (2003-10-01), Kim

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