Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-05-30
2006-05-30
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S166000, C438S758000, C438S778000, C438S787000
Reexamination Certificate
active
07052940
ABSTRACT:
A method of forming a polysilicon thin film transistor that includes depositing an amorphous silicon layer over a substrate, crystallizing the amorphous silicon layer into a polycrystalline silicon layer, patterning the polycrystalline silicon layer to form a polysilicon active layer for a thin film transistor, depositing silicon oxide over the polysilicon active layer to form a gate insulation layer under a vacuum condition, applying heat to anneal the gate insulation layer under a vacuum condition and forming a gate electrode on the annealed gate insulation layer.
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Isaac Stanetta
Lebentritt Michael
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP.
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