Method of fabricating thin film transistors

Details Method of fabricating thin film transistors Method of fabricating thin film transistors

1998-02-12

2000-06-20

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438307, 438151, H01L 2184, H01L 21336

Patent

active

060777303

ABSTRACT:
A method is provided for fabricating a thin film transistor on a substrate. The method includes the steps of forming an active layer having a channel region on the substrate, forming an impurity-blocking mask covering the channel region and portions of the active layer outside the channel region adjacent the channel region, and doping impurities of a first conductivity type at a high density into portions of the active layer uncovered by the impurity-blocking mask to form impurity-doped regions in the active layer. The method further includes the steps of removing the impurity-blocking mask and thereafter performing a plasma treatment on the resultant structure using a plasma gas containing impurities of the first conductivity type to form LDD regions in the active layer between the channel region and the impurity-doped regions.

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patent: 5904509 (1999-05-01), Zhang et al.
patent: 5923961 (1999-07-01), Shibuya et al.
patent: 5949107 (1999-09-01), Zhang

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