Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-11-13
2007-11-13
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000
Reexamination Certificate
active
11023637
ABSTRACT:
A method of fabricating a thin film transistor with multiple gates uses a super grain silicon (SGS) crystallization process. The thin film transistor includes a semiconductor layer having a zigzag shape formed on an insulating substrate, and a gate electrode that overlaps the semiconductor layer. The semiconductor layer includes a high-angle grain boundary formed during the SGS crystallization process in a portion of the semiconductor layer that is not overlapped by the gate electrode.
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Le Thao P.
Samsung SDI & Co., Ltd.
Stein, McEwen & Bui LLP
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