Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-04-19
2011-04-19
Valentine, Jami M (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S059000, C257SE21413
Reexamination Certificate
active
07927929
ABSTRACT:
A method of fabricating a thin film transistor (TFT) includes first providing a strip-shaped silicon island which is a thin film region with a predetermined long side and short side. Next, the strip-shaped silicon island is subject to an ion implantation to form a first ion doping region and a second ion doping region. The first and second ion doping regions, respectively used as the source and the drain of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate. A gate is formed over the strip-shaped silicon island and the first and second ion doping regions, wherein the gate is substantially parallel to the direction of the short side.
REFERENCES:
patent: 6300649 (2001-10-01), Hu et al.
patent: 2006/0172469 (2006-08-01), Lin et al.
Chen Chi-Lin
Chen Yu-Cheng
Liu Po-Tsun
Wu Hsing-Hua
Industrial Technology Research Institute
Jianq Chyun IP Office
Valentine Jami M
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