Method of fabricating thin film transistor array substrate

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S153000, C438S155000, C257SE21413, C257SE21700, C257SE29117, C257SE29273, C257SE29275

Reexamination Certificate

active

07935581

ABSTRACT:
A method of fabricating a TFT array substrate that prevents mobile ions from moving from a photoresist to channels of the TFT by the gate electrode of the TFT by performing photolithography processes for ion injection after forming gate electrode of TFT and, in addition, a method of fabricating a TFT array substrate that omits a photolithography process for forming a lower electrode of a storage capacitor by forming the lower electrode of the storage capacitor by a channel doping process for a PMOS TFT.

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The Notice of Allowancefrom the Korean Intellectual Property Office issued in Applicant's corresponding Korean Patent Application No. 10-2006-0076297 dated Nov. 12, 2007.

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