Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-06-13
2006-06-13
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S157000
Reexamination Certificate
active
07060540
ABSTRACT:
A method of fabricating a thin film transistor array is provided. A first patterned conductive layer that distributes over an area range exceeding the designated display region is formed over a substrate. A first dielectric layer is formed over the substrate, wherein the first dielectric layer has the thickness getting smaller toward the edge, so that the first patterned conductive layer outside the designated display region is exposed. A second patterned conductive layer is formed over the first dielectric layer. The second patterned conductive layer and the exposed first patterned conductive layer are electrically connected. A second dielectric layer having a plurality of contact openings therein is formed over the substrate. A plurality of pixel electrodes is formed over the second dielectric layer such that the pixel electrode and the second patterned conductive layer are electrically connected through the contact openings. Finally, various layers outside the designated display regions are removed.
REFERENCES:
patent: 5798534 (1998-08-01), Young
patent: 5929947 (1999-07-01), Tani
patent: 6624012 (2003-09-01), Shibata et al.
Hafiz Mursalin Bin
Jianq Chyun IP Office
Pham Hoai
Quanta Display Inc.
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