Method of fabricating thin film transistor

Details Method of fabricating thin film transistor Method of fabricating thin film transistor

2008-05-27

2008-05-27

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE51005

Reexamination Certificate

active

07378303

ABSTRACT:
A method for fabricating a thin film transistor is provided. A conductive layer is formed on a substrate. A patterned mask is formed on the conductive layer to cover a predetermined thin film transistor (TFT) area, and at least one portion of the conductive layer exposed by the patterned mask are removed. A laser is applied to form a laser hole in the patterned mask to expose a portion of the conductive layer and the laser hole substantially corresponds to a channel region of the predetermined TFT area. The exposed conductive layer is etched to form source and drain electrodes on opposite sides of the channel region.

REFERENCES:
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 7135360 (2006-11-01), Chae et al.
patent: 7229862 (2007-06-01), Yamazaki et al.

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