Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-01-11
2010-11-16
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S158000, C257SE21561
Reexamination Certificate
active
07834352
ABSTRACT:
A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.
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Byun Young Hun
Koo Bon Won
Lee Sang Yoon
Lee Tae Woo
Lyu Yi Yeol
Booth Richard A.
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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