Method of fabricating thin film transistor

Details Method of fabricating thin film transistor Method of fabricating thin film transistor

2004-12-22

2008-11-18

Menz, Douglas M. (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257SE21535, C117S008000, C438S166000, C438S478000

Reexamination Certificate

active

07452790

ABSTRACT:
Disclosed is a method of fabricating a thin film transistor in which, in order to control the concentration of metal catalysts remaining on a polycrystalline silicon layer when an amorphous silicon layer formed on an insulating substrate is crystallized into the polycrystalline silicon layer by a super grain silicon (SGS) crystallization method, the substrate is annealed so that a very small amount of metal catalyst is adsorbed or diffused into a capping layer, and then a crystallization process is carried out, thereby minimizing the concentration of the metal catalysts remaining on the polycrystalline silicon layer, as well as forming a thick metal catalyst layer. The method includes preparing an insulating substrate; sequentially forming an amorphous silicon layer, a capping layer, and a metal catalyst layer on the substrate; first annealing the substrate to adsorb or diffuse metal catalysts into the capping layer; removing the metal catalyst layer; second annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer by means of the metal catalyst; and removing the capping layer. Thus, with the method of fabricating the thin film transistor of the present invention, it is possible to minimize the concentration of the metal catalysts remaining on the polycrystalline silicon layer, as well as to form a thick metal catalyst layer.

REFERENCES:
patent: 3255056 (1966-06-01), Becke et al.
patent: 3808060 (1974-04-01), Hays et al.
patent: 5888857 (1999-03-01), Zhang et al.
patent: 6162667 (2000-12-01), Funai et al.
patent: 6346437 (2002-02-01), Maekawa et al.
patent: 6420246 (2002-07-01), Yamazaki et al.
patent: 6506636 (2003-01-01), Yamazaki et al.
patent: 6613613 (2003-09-01), Yamazaki et al.
patent: 6620661 (2003-09-01), Maekawa et al.
patent: 6777714 (2004-08-01), Muramatsu et al.
patent: 6784455 (2004-08-01), Maekawa et al.
patent: 6884698 (2005-04-01), Ohtani et al.
patent: 6997985 (2006-02-01), Yamazaki et al.
patent: 2002/0086471 (2002-07-01), Maekawa et al.
patent: 2006/0033106 (2006-02-01), Seo et al.
patent: 2006/0130939 (2006-06-01), Jang et al.
patent: 2006/0286780 (2006-12-01), Jang et al.
patent: 08-097137 (1996-04-01), None
patent: 2003060403 (2003-07-01), None
patent: 10-2004-0040762 (2004-05-01), None
patent: WO 2004042805 (2004-05-01), None
Choi, Jong-Hyun, et al. “Kinetics of Ni-Mediated Crystallization of a-Si Through a SiNx Cap Layer.” J. Electrochem. Soc., vol. 151, No. 7 (2004): pp. G448-G451.

Affiliated with

Also associated with

Rating

Method of fabricating thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4044980